dmg4511sk4 document number: ds32042 rev. 4 - 2 1 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 complementary pair enh ancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 35v 35m ? @ v gs = 10v 13a -35v 45m ? @ v gs = -10v -12a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? lead free/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252-4l ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.328 grams (approximate) ordering information (note 3) part number case packaging dmg4511sk4-7 to252-4l 3000 / tape & reel notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information top view bottom view d 1 s 1 g 1 d 2 s 2 g 2 n-channel mosfet p-channel mosfet = manufacturer?s marking g4511s = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 ? 53) g4511s yyww
dmg4511sk4 document number: ds32042 rev. 4 - 2 2 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 maximum ratings ? n-channel, q1 @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 35 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = 10v steady state t a = 25c t a = 70c i d 5.3 4.2 a continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 8.6 6.8 a continuous drain current (note 5) v gs = 10v t 10s t a = 25c t a = 70c i d 13 11 a continuous drain current (note 5) v gs = 4.5v steady state t a = 25c t a = 70c i d 6.3 5.0 a continuous drain current (note 5) v gs = 4.5v t 10s t a = 25c t a = 70c i d 9.3 7.4 a pulsed drain current (note 6) i dm 50 a maximum ratings ? p-channel, q2 @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -35 v gate-source voltage v gss 20 v continuous drain current (note 4) v gs = -10v steady state t a = 25c t a = 70c i d -5.0 -3.8 a continuous drain current (note 5) v gs = -10v steady state t a = 25c t a = 70c i d -7.8 -6.2 a continuous drain current (note 5) v gs = -10v t 10s t a = 25c t a = 70c i d -12 -10 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d -6.5 -5.2 a continuous drain current (note 5) v gs = -4.5v t 10s t a = 25c t a = 70c i d -9.6 -7.7 a pulsed drain current (note 6) i dm -50 a thermal characteristics characteristic symbol value unit power dissipation (note 4) p d 1.54 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 81.3 c/w power dissipation (note 5) p d 4.1 w thermal resistance, junction to ambient @t a = 25c (note 5) r ja 30.8 c/w power dissipation (note 5) t 10s p d 8.9 w thermal resistance, junction to ambient @t a = 25c (note 5) t 10s r ja 14 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 5. device mounted on 2? x 2? fr-4 pcb with high coverage 2 oz. copper, single sided. 6. repetitive rating, pulse width limited by junction temperature.
dmg4511sk4 document number: ds32042 rev. 4 - 2 3 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 electrical characteris tics ? n-channel, q1 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 35 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 35v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.0 - 3.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 25 50 35 65 m v gs = 10v, i d = 8a v gs = 4.5v, i d = 6a forward transfer admittance |y fs | - 4.5 - s v ds = 10v, i d = 8a diode forward voltage v sd - - 1.2 v v gs = 0v, i s = 8a dynamic characteristics (note 8) input capacitance c iss - 850 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 64.7 - pf reverse transfer capacitance c rss - 51.9 - pf gate resistance r g - 1.6 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 10v) q g - 18.7 - nc v gs = 10v, v ds = 28v, i d = 8a total gate charge (v gs = 4.5v) q g - 8.8 - v gs = 4.5v, v ds = 28v, i d = 8a gate-source charge q g s - 2.6 - gate-drain charge q g d - 2.1 - turn-on delay time t d ( on ) - 5.4 - ns v ds = 18v, v gs = 10v, r l = 18 ? , r g = 3.3 ? , i d = 1a turn-on rise time t r - 2.8 - ns turn-off delay time t d ( off ) - 33.2 - ns turn-off fall time t f - 35.6 - ns electrical characteris tics ? p-channel, q2 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -35 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds = -35v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -1.0 - -3.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 30 40 45 65 m v gs = -10v, i d = -6a v gs = -4.5v, i d = -4a forward transfer admittance |y fs | - 8 - s v ds = -10v, i d = -6a diode forward voltage v sd - -1.2 v v gs = 0v, i s = -6a dynamic characteristics (note 8) input capacitance c iss - 985.2 - pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 90.6 - pf reverse transfer capacitance c rss - 75.3 - pf gate resistance r g - 7.0 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -10v) q g - 19.2 - nc v gs = -10v, v ds = -28v, i d = -6a total gate charge (v gs = -4.5v) q g - 9.5 - v gs = -4.5v, v ds = -28v, i d = -6a gate-source charge q g s - 2.0 - gate-drain charge q g d - 3.5 - turn-on delay time t d ( on ) - 5.2 - ns v ds = -18v, v gs = -10v, r l = 18 ? , r g = 3.3 ? , i d = -1a turn-on rise time t r - 4.8 - ns turn-off delay time t d ( off ) - 45.8 - ns turn-off fall time t f - 29.5 - ns notes: 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dmg4511sk4 document number: ds32042 rev. 4 - 2 4 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 n-channel, q1 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds 0 5 10 15 20 25 30 i, d r ain c u r r en t (a) d v = 3.2v gs v = 3.0v gs v = 4.5v gs v = 3.5v gs v = 4.0v gs v = 8.0v gs v = 2.8v gs 01 23 45 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs 0 5 10 15 20 25 30 i, d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.01 0.02 0.03 0.04 0.05 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v gs v = 8.0v gs 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 10v i = 10a gs d v = 4.5v i = 5a gs d
dmg4511sk4 document number: ds32042 rev. 4 - 2 5 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 t = 25c a fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r e n t (a) s 0 200 400 600 800 1,000 1,200 1,400 0 5 10 15 20 25 30 35 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) f = 1mhz c iss c rss c oss 5 1015 20253035 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 i , leaka g e c u r r en t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 80c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg4511sk4 document number: ds32042 rev. 4 - 2 6 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 p-channel, q2 0 0.5 1 1.5 2 fig. 12 typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d v = -2.8v gs v = -3.0v gs v = -3.2v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v = -8.0v gs 0 5 10 15 20 25 30 01 23 45 fig. 13 typical transfer characteristic -v , gate-source voltage (v) gs -i , d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 25 30 fig. 14 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = -4.5v gs v = -8.0v gs 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 -i , drain current (a) d fig. 15 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 v = -10v i = -10a gs d v = -4.5v i = -5a gs d fig. 16 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) dson fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v = -10v i = -10a gs d v = -4.5v i = -5a gs d
dmg4511sk4 document number: ds32042 rev. 4 - 2 7 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 18 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = -250a d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 fig. 19 diode forward voltage vs. current -v , source-drain voltage (v) sd -i , s o u r c e c u r r en t (a) s t = 25c a 0 200 400 600 800 1,000 1,200 1,400 0 5 10 15 20 25 30 35 fig. 20 typical total capacitance -v , drain-source voltage (v) ds c , t o t al c a p a c i t an c e (p f ) t c iss c rss c oss f = 1mhz 5101520253035 fig. 21 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 10,000 -i , leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 22 transient thermal response t , pulse duration time (s) 1 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 80c/w ja ja p(pk) t 1 t 2 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg4511sk4 document number: ds32042 rev. 4 - 2 8 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 package outline dimensions suggested pad layout to252-4l dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.51 0.71 0.583 b2 0.61 0.79 0.70 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 1.27 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) c 1.27 c1 2.54 x 1.00 x1 5.73 y 2.00 y1 6.17 y2 1.64 y3 2.66 b3 e 4x b2 d l4 a c2 e a1 l l3 5x b a h a2 e1 x1 y1 y2 y3 y x (4x) c c1
dmg4511sk4 document number: ds32042 rev. 4 - 2 9 of 9 www.diodes.com july 2011 ? diodes incorporated dmg4511sk4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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